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Thermoelectric Properties of CuBr-doped n-type 85% Bi2Te3-15% Bi2Se3 Thermoelectric Materials
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황종승 , 현도빈 , 오태성 , 이은하 , 이동희 J . S . Hwang , D . B . Hyun , T . S . Oh , E . H . Lee , D . H . Lee |
KJMM 36(3) 454-459, 1998 |
ABSTRACT
For the CuBr-doped 85% Bi₂Te₃-15% Bi₂Se₃ single crystals, the temperature dependences of Seebeck coefficient, electrical resistivity, thermal conductivity, and ftgure-of-merit have been characterized at temperatures ranged from 77K to 600K. Comparing to 85% Bi₂Te₃ 15% Bi₂Se₃, the (m^*/m_0)^(3/2). μc of the CuBr-doped 85% Bi₂Te₃ - 15% Bi₂Se₃ specimens was higher than that of the undoped specimens indicating that the addition of CuBr was effective for the improvement of figure-of-merit. Electron concentration was increased with increasing CuBr content, decresing the Seebeck coefficient and electrical resistivity, and shifting the maximum of figure-of-merit to higher temperatures. A maximum figure-of-merit obtained in these experiments was 2.2×10^(-3)/K for the 0.03 wt% CuBr-doped 85% Bi₂Te₃ 15% Bi₂Se₃ single crystal.
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Effect of the Thermoelectric Phenomena on the Defect Morphology of Zone-Melting-Recrystallized SOI Thin Film
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류지호 , 홍순민 , 이진우 , 신윤호 , 강춘식 , 백홍구 , 김형준 Ji Ho Ryu , Soon Min Hong , Jin Woo Lee , Yun Ho Shin , Choon Sik Kang , Hong Koo Baik , Hyoung June Kim |
KJMM 36(3) 460-468, 1998 |
ABSTRACT
A new process was proposed to control the defects in the ZMR-SOI thin film. Thermoelectric phenomena were adopted to the conventional lamp-ZMR. The effect of the new process was verified by the experimental examination and analyzed by the computer simulation. It was possible to control the defects by the ZMR with thermoelectric phenomena. The negative direct current density decreased the inter-defect spacing, while the positive current increased the defects spacing. It was shown by the computer simulation that the Peltier effect was the most dominant among the thermoelectric phenomena. The experimental results were correlated with the width of undercooling. A model was proposed to explain the mechanism of defect generation.
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Characterization of Al / TiNip Shape Memory Composites Fabricated by Powder Metallurgy
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김부섭 , 한창훈 , 최일동 , 박익민 , 안득만 B . S . Kim , C . H . Han , I . D . Choi , I . M . Park , D . M . An |
KJMM 36(3) 469-477, 1998 |
ABSTRACT
Metal matrix composites reinforced with shape memory alloys induce compressive residual stresses in the matrices and result in improved tensile properties of the composite. In the present study. Al/TiNi_p shape memory composites were fabricated by powder metallurgical method, so called Plasma Activated Sintering method (PAS). Strengthening effect due to TiNi particle reinforcement as well as compressive residual stresses in A1 matrix were investigated. Fairly good matrix/reinforcement bonding was observed in the Al/TiNi_p composites. It was found that the yield strength of the composites is increased with increasing the volume fraction of TiNi particles and the amount of prestrain applied to the composites. For example, yield strength increases from 64㎫ to 114㎫ with reinforcement of 8% TiNi_p shape memory particles to the Al matrix when 4% prestrain is applied to the composite.
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