발간논문

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Vol.25, No.8, 579 ~ 586, 1987
Title
Preparation of β - SiC Whisker by vapor Phase reaction- synthesizing β - SiC whisker in SiCl4- Cl2 C = CH2 - H2 System -
박광원Kwang Won Park, 김수식Soo Sik Kim
Abstract
The conditions for the formation of β-silicon carbide whisker by vapor phase reaction in SiCl₄-Cl₂C = CH₂-H₂ system have been investigated. The conversion rate of SiCl₄ into SiC increased with reaction temperature and had been taken maximum value when the range of SiC1₄/Cl₂C = CH₂ mole ratio was from 2.5 to 2.8. The β-silicon carbide whisker can be formed in the range of reaction temperature from 1,100℃ to 1,500℃; SiCl₄/Cl₂C = CH₂ mole ratio, from 0.5 to 8.0,; total flow rate of the reactant gas at 300㎖/min. This whiskers were identified as the 8F type SiC by X-ray diffraction and had the length of 20㎛ or longer.
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