발간논문

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Vol.28, No.6, 486 ~ 492, 1990
Title
Effects of Hg - Annealing at Different Temperatures on the electrical Properties of LPE Grown Hg0.8Cd0.2Te
문성욱S . W . Moon, 최종술C . S . Choi, 정용택Y . T . Jeong, 김재묵J . M . Kim, 서상희S . H . Suh
Abstract
Hg_(0.8)Cd_(0.2)Te epitaxial layers were grown by an LPE(liquid phase epitaxy) process. As-grown Hg_(0.8)Cd_(0.2)Te showed p-type conductivity with a carrier concentration of 8.8×10^(17)㎝^(-3). Annealings of as-grown Hg_(0.8)Cd_(0.2)Te wafers in Hg-atmosphere were performed over the temperature range 200 to 430℃. Annealings below 300℃ resulted in n-type conductivity with carrier concentrations from 10^14 to 10^15 cm^-3 and showed a maximum value at about 260℃. p→in type conversion temperature is thought to be determined by Hg-interstitials rather than residual donor impurities. The phase boundary of Hg_(0.8)Cd_(0.2)Te on the metal-rich side could be obtained.
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