발간논문

Home > KJMM 논문 > 발간논문

Vol.29, No.10, 1048 ~ 1054, 1991
Title
Dielectric Properties of Ta2O5 Thin Film formed by Thermal oxidation
박상균Sang Kyun Park, 박종완Jong Wan Park
Abstract
Ta₂O₃, thin films on p-type (100) Si substrate were prerared by thermal oxidation at 450∼650℃ of DC magnetron sputtered tantalum films. Capacitance and relative dielectric constant of the Ta₂O_5 film were found to be 1.71 fF/μ㎡ and 31.7, respectively, at 500℃, 2h. Leakage current had a minimum value of 5×10^(-6)A/㎠ for 1MV/㎝ at 600℃, 1h. It was found that the 650℃ 1h oxidation treatment induced formation of crystalline δ-Ta₂O_5 of hexagonal structure The dc conduction characteristics of Ta₂O_5 films can be interpreted by assuming Poole-Frenkel conduction. the dielectric properties of the tantalum oxide films were improved by proper oxidation treatments.
Key Words
| PDF
대한금속∙재료학회 │ (06633) 서울시 서초구 서초대로 56길 38 대한금속∙재료학회 회관 (서초1동 1666-12번지)
Tel : 070-4266-1646 │ FAX : 02-557-1080 │ E-mail : metal@kim.or.kr
Copyright ⓒ 2013 사단법인 대한금속∙재료학회 All rights reserved.