| The effect of plasma on the deposition rate of AlN film on a Si (111) substrate in PECVD process was investigated. AlCl₃ and NH₃ gases were used as precursors of aluminum and nitrogen, respectively. The process was carried out at relatively low temperatures under R.F plasma. Though some oxygen impurity was present in the film, the reasonably good stoichiometry of AlN was obtained. Employing the process variables such as temperature, plasma power, pressure and ammonia flow rate, the growth rate and refractivity index of coating layers were studied. The result of XRD analysis showed, the amorphous AlN film was formed at the low temperature of 500℃, while the crystalline structure was developed at higher temperatures. |
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