발간논문

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Vol.35, No.6, 740 ~ 748, 1997
Title
Electrostatic bonding of glass and Si using Al thin film interlayer for residual stress relief
문제도 , 최영환 , 오재열 , 조영래 , 정호수 J . D . Mun , Y . H . Choi , J . Y . Oh , Y . R . Cho , H . S . Jeong
Abstract
Al deposited Si was electrostatically bonded to glass with different coefficient of thermal expansion. Bondings were achieved around 150℃ and cracks were observed in specimens bonded above 200℃ whereas no bondings were achieved at 100℃. This paper investigates the effect of bonding temperature and applied voltage on the bonding property of Al-deposited Si/glass bonded couple and the method of low temperature electrostatic bonding.
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