발간논문

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Vol.38, No.4, 571 ~ 576, 2000
Title
Pesearch Paper / Electronic , Magnetic & Optical Matrials : An Enhancement of the Metal Induced lateral Craystallization Rate by Metal Heat Absorption Layer in Rapid Thermal Annealing Process
윤여건Yeo Geon Yoon,김태경Tae Kyung Kim,이병일Byung Il Lee,주승기Seung Ki Joo
Abstract
We proposed a rapid thermal annealing process with Mo heat absorption layer for the purpose of an enhancement of Metal-Induced Lateral Crystallization(MILC) rate of amorphous silicon (a-Si) thin films on glass substrates. MILC rate was enhanced by using Mo absorption layer with relatively low lamp power than without Mo layer. With Mo layer, amorphous silicon was laterally crystallized about 20 ㎛ only 1 minute at 620℃. This is because Mo film can absorb the light more effectively than a-Si thin film and can be higher temperature about 290℃ than that of a-Si thin film. Enhancement of MILC rate by Mo layer was found to be more effective as thickness of Mo increase, because the thicker Mo layer can absorb the more light. MILC rate, however, decreased when insulating layer(SiO₂) between Mo and a-Si layer was inserted.
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