발간논문

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Vol.38, No.8, 1118 ~ 1126, 2000
Title
Effects of Surface States and Bulk Electron Traps on Gate Leakage Current and Transconductance Dispersion in an AlGaAs/InGaAs p-HEMT
최경진Kyung Jin Choi,이종람Jong Lam Lee
Abstract
Origins for transconductance dispersion and gate leakage current in an AlGaAs/InGaAs pseudomorphic high-electron-mobility transistor (p-HEMT) were found by capacitance deep-level transient spectroscopy(DLTS) measurements. In DLTS spectra, we observed a couple of surface states with thermal activation energies of (0.50±0.03) eV and (0.81±0.01) eV and the DX-center with thermal activation energy of (0.42±0.01) eV. Transconductance was increased in the low frequency range and then decreased in the high frequency range. The transition frequency shifted to higher frequency with the increase of temperature and the activation energy for the change of the transition frequency was determined to be (0.39±0.03) eV. It was found that the activation energy for the conductance of electrons on the surface of p-HEMT was (0.55 ±0.01) eV. Comparing the activation energy of DX-center and surface states with those for transconductance dispersion and gate leakage current, we found DX-centers and surface states H1 caused transconductance dispersion and gate leakage current, respectively.
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