| C54-TiSi₂ grown on SiO₂ as an interconnect showed thermal instability, even skinning, through the rapid thermal anneal(RTA). In order to understand the thermal instability of C54-TiSi₂ the interface between the thin film and the substrate was analyzed with Auger electron spectroscopy(AES) and transmission electron microscopy(TEM). Also we quantitatively analysed residual stress using known thermal properties of C54-TiSi₂. It was noted, as a result, that considerable amounts of residual stress were released by silicon retained at the interface. Therefore surplus silicon should be prepared between titanium and substrate in order to make C54-TiSi₂ thermally stable, so that the surplus silicon may play a role of buffer against residual stress. |
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