발간논문

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Vol.39, No.5, 566 ~ 571, 2001
Title
Electronic , Magnetic & Optical Materials : Indium-Tin Oxide (ITO)/Si Contacts with In and Sn Diffusion Barriers
유호진Ho Jin Ryu,강진모Jin Mo Kang,한영건Young Gun Han,김동환Dong Hwan Kim,박정호Jung Ho Pak,박원규Won Kyu Park,양명수Myoung Su Yang
Abstract
Indium and tin layers were used as the diffusion barriers between the indium-tin oxide (ITO) and poly-Si in order to reduce the contact resistance. ITO/Si contacts should be adopted in thin-film transistor liquid crystal display (TFT LCD) for simplifying the fabrication process. For 5 ㎚ thick In and Sn layers, 10-minute annealing at 250℃ was performed to minimize the loss in the optical transmittance. With In and Sn layers, contact resistance values of 5×10^(-3) ∼ 4×10^(-3)Ω㎠ were obtained. These values were higher than those measured from the conventional ITO/Mo/Al/Si contacts (5×10^(-5) Ω㎠∼4 ×10^(-4)Ω㎠) but. lower than those obtained from ITO/Si contacts (about 1×10^(-1)Ω㎠) Sn was found to be stable after the annealing but In lost its function as a diffusion barrier by diffusion into Si.
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