| Abstract |
| Ta films were deposited on Si (100) substrates at substrate bias voltages of 0 V, -50 V, and -125 V by a non-mass separated ion beam deposition. Secondary ion mass spectrometry (SIMS) and glow discharge mass spectrometry (GDMS) were used to determine the concentrations of dominant impurity elements, i.e., H, C, N, and 0, which are likely to contaminate Ta films during the deposition. The GDMS results revealed that dominant impurities during the deposition were C, N, and 0 elements and many unknown peaks observed in the SIMS spectra of the Ta film were assigned to cluster states such as C_(x)H_(x), O_(x)H_(x), C_(x)O_(x)H_(x). Furthermore, it was found that the concentrations of these impurities in the Ta films can be controlled by the negative substrate bias voltage. (Received September 7, 2005) |
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| Key Words |
| Ion beam deposition, Tantalum, Impurity, Substrate bias voltage, Secondary ion mass spectrometry, Glow discharge mass spectrometry |
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