| Abstract |
| Effects of annealing on the electrical resistivity and transmittance properties of Ga-doped ZnO (GZO) thin films deposited on glass by rf magnetron sputtering were investigated. The electrical resistivity of a GZO thin film is effectively decreased by annealing in a reducing atmosphere such as N2+5%H2. This is attributed to passivation of grain boundaries and zinc ions by hydrogen atoms resulting in increases in carrier concentration and mobility. However, annealing at a temperature higher than 400℃ is less effective. The lowest resistivity of 2.3 × 10(-4)Ωcm is obtained by annealing at 400℃ in an N2+5%H2 atmosphere. The optical transmittance of the GZO film is improved by annealing regardless of the annealing atmosphere. Annealing in N2+5%H2 atmosphere widens the optical band gap, while annealing in an O2 atmosphere makes the band gap narrower, which can be explained as a blue shift phenomenon. |
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| Key Words |
| GZO, RF magnetron sputtering, Ga doping, Transparent conducting oxides |
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