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Vol.49, No.4, 313 ~ 321, 2011
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| Title |
| Property of Nano-thick Silicon Films Fabricated by Low Temperature Inductively Coupled Plasma Chemical Vapor Deposition Process |
| 신운 Yun Shen , 심갑섭 Gap Seop Sim , 최용윤 Yong Yoon Choi , 송오성 Oh Sung Song |
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| Abstract |
| 100 nm-thick hydrogenated amorphous silicon (α-Si:H) films were deposited on a glass and glass/30 nm Ni substrates by inductively-coupled plasma chemical vapor deposition (ICP-CVD) at temperatures ranging from 100 to 550℃. The sheet resistance, microstructure, phase transformation and surface roughness of the films were characterized using a four-point probe, AFM (atomic force microscope), TEM (transmission electron microscope), AES (Auger electron spectroscopy), HR-XRD(high resolution X-ray diffraction), and micro-Raman spectroscopy. A nano-thick NiSi phase was formed at substrate temperatures >400℃. AFM confirmed that the surface roughness did not change as the substrate temperature increased, but it increased abruptly to 6.6 nm above 400℃ on the glass/30 nm Ni substrates. HR-XRD and micro-Raman spectroscopy showed that all the Si samples were amorphous on the glass substrates, whereas crystalline silicon appeared at 550℃ on the glass/30 nm Ni substrates. These results show that crystalline NiSi and Si can be prepared simultaneously on Ni-inserted substrates. |
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| Key Words |
| Si thin films, ICP-CVD, crystallization, TEM, Low temperature process |
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