| Abstract |
| We studied the effect on physical properties of CuInSe2 (CIS) thin films by change of the Se content in Cu-In-Se precursors. The three kinds of precursors with different Se content were deposited by a hybrid sputtering system which was equipped with the Selenium Knudsen cell (Se K-cell). The precursors were heated in an Se atmosphere for 15 minutes at 425 ℃, which produced crystalline CIS films. We characterized the crystalline CIS films using scanning electron microscopy (SEM), energy-dispersive x-ray spectroscopy (EDS), x-ray diffraction (XRD), and a Hall effect measurement system. The size of the island in the CIS films was reduced with an increasing Se content in the Cu-In-Se precursors. We found that the island structure in the CIS films disappeared with precursors of Se content over 19 at%. We were able to make a highly adhesive CIS film to Mo back contacts by using precursors with Se content of 19 at%. The solar cells fabricated with the CIS films using precursors with an Se content of 19 at% achieved 8.2% efficiency. |
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| Key Words |
| solar cells, sputtering, interfaces, X-ray diffraction, CuInSe2 film |
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