| Abstract |
| Copper was electroplated using plating baths containing various concentrations of Janus Green B (JGB, C30H31ClN6) from 0 to 1 mM. The electrical resistance, microstructure and impurity concentration were investigated by using four point probe, electron backscattered diffraction, and glow discharge spectroscopy analyses, respectively. The initial sheet resistance of the Cu films was increased by increasing the JGB concentration, and the impurity concentrations of C, H and N also linearly increased. At 0.2 mM of JGB, while the sheet resistance decreased by 7% for the initial resistance, crystal growth did not occur. The initial decrease in electrical resistance was due to the redistribution of impurities, and grain boundary migration was inhibited by solute dragging. As a result, we were able to retard the recrystallization of Cu electrodeposits using the impurities from the JGB additive. (Received April 4, 2016) |
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| Key Words |
| recrystallization, electron backscattering diffraction(EBSD), copper, electroplating, glow discharge spectroscopy(GDS) |
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