|
Vol.54, No.10, 775 ~ 780, 2016
|
| Title |
| Effect of Post-Depositon Annealing on the Structural, Optical and Electrical Properties of Ti-doped Indium Oxide Thin Films |
| Sung-Bo Heo , Hyun-Joo Moon , Jeong-Hyeon Oh , Young-Hwan Song , Tae-Young Eom , Jun-Ho Kim , Daeil Kim |
|
|
|
| Abstract |
| Ti-doped In₂O₃ (TIO) thin films were deposited on glass substrates by RF magnetron sputtering. The films were then annealed at 100, 200 or 300 °C for 30 min to investigate the effects of the annealing temperature on the films’ structural, electrical and optical properties. The films annealed at 200 °C and above were polycrystalline in phase, and their electrical resistivity decreased to as low as 7.5×10-4 Ω cm at the annealing temperature of 300°C. The films’optical transmittance in the visible wavelength region also improved from 77.7% to 81.2% when the annealing temperature was increased. The TIO films’ figures of merit were evaluated, showing that the TIO films annealed at 300 °C had better optical and electrical performance than the other films prepared using lower-temperature or no annealing. |
|
|
| Key Words |
| thin film, sputtering, electrical properties, x-ray diffraction, figure of merit |
|
|
 |
|
