| Abstract |
| This research elucidates the intricate interplay of lithium content, oxygen pressure, and temperature and their influence on the electrical properties of Lithium-doped zinc oxide (LZO). The electrical behavior of zinc oxide (ZnO), a prominent semiconductor material, can be modulated when doped with lithium (Li). Through systematic experimentation, we demonstrate that varying lithium content in the ZnO matrix leads to notable shifts in carrier concentration and mobility, which in turn impacts the material's conductivity and overall electrical performance. Furthermore, oxygen pressure during synthesis plays a pivotal role in defect formation, especially oxygen vacancies, which interact dynamically with lithium dopants to further modulate electrical behavior. Introducing the variable of temperature, our study reveals a synergistic effect, where temperature not only affects intrinsic carrier concentration but also the interactions between lithium dopants and inherent defects in ZnO. Under optimized conditions of oxygen pressure and temperature, the influence of Li content on crystallinity was pronounced, consequently impacting mobility. In contrast, under unoptimized conditions, as Li concentration increased, particularly beyond optimal levels (0.75 mol%), introduced Li atoms assumed the role of compensating centers by capturing or neutralizing carriers, reducing mobility. The findings presented herein provide a comprehensive understanding of how these factors collectively determine the electrical properties of LZO, paving the way for tailored applications in optoelectronic devices, sensors, and more.
(Received 6 October, 2023; Accepted 9 November, 2023) |
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| Key Words |
| zinc oxide, Li-doping, mobility, field effect transistor, carrier concentration |
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