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Effect of TiO2 Content on the Crystalline Growth and Hydrophobic Properties of Borophosphate Glass
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| Yoon Ki Jeong , Il Gu Kim , Bong Ki Ryu |
| KJMM 54(6) 461-468, 2016 |
ABSTRACT
The effect of the TiO2 level in 30P2O5-30B2O3-40Na2O glasses on their crystallization kinetics and hydrophobic properties was investigated. The kinetic parameters, activation energy for crystallization (Ec), and Avrami constant (n) were evaluated under non-isothermal conditions using differential thermal analysis (DTA) performed for a range of heating rates. Each DTA curve exhibited one exothermic peak associated with the crystallization of the glass. X-ray diffractometry (XRD) analysis identified the crystalline phase as NaTi2(PO4)3. The calculated values of the local activation energies for the glass samples were obtained using the Kissinger and the Marotta methods. The hydrophobic properties as a function of the TiO2 content were identified by water contact angle goniometer. The results indicated that the water contact angle increased as the level of TiO2 increased. However, as crystallization progressed within the glass samples, the water contact angles decreased. (Received October 23, 2015)
keyword : amorphous materials, crystal growth, crystallization, thermal analysis
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Control of Impurity Concentrations in Copper Electrodeposits by Using an Organic Additive
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| 박채민 Chae Min Park , 이의형 Ui Hyoung Lee , 이효종 Hyo Jong Lee |
| KJMM 54(6) 469-474, 2016 |
ABSTRACT
Copper was electroplated using plating baths containing various concentrations of Janus Green B (JGB, C30H31ClN6) from 0 to 1 mM. The electrical resistance, microstructure and impurity concentration were investigated by using four point probe, electron backscattered diffraction, and glow discharge spectroscopy analyses, respectively. The initial sheet resistance of the Cu films was increased by increasing the JGB concentration, and the impurity concentrations of C, H and N also linearly increased. At 0.2 mM of JGB, while the sheet resistance decreased by 7% for the initial resistance, crystal growth did not occur. The initial decrease in electrical resistance was due to the redistribution of impurities, and grain boundary migration was inhibited by solute dragging. As a result, we were able to retard the recrystallization of Cu electrodeposits using the impurities from the JGB additive. (Received April 4, 2016)
keyword : recrystallization, electron backscattering diffraction(EBSD), copper, electroplating, glow discharge spectroscopy(GDS)
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